OutlineftGHzVce(V)Ic(mA)Vcbo(V)Vceo(V)Vebo(V)P(W)Ic(mA)S212 Dbf GHzVce(V)Ic(mA)Hfe minHfe max2.25 0.2 20 15 3 60-250 8 0.07 0.8 SOT-89
BFQ591 |
RFQ for BFQ591 |
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| Product | Manufacturers | Pack | D/C | |||||||||||||||
| BFQ591 | - | SOT89 | 06+ |
Typical Application |
Features |
| Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment. | · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability. |
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
15 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
3 |
V |
| IC | collector current (DC) |
- |
200 |
mA | |
| Ptot | total power dissipation |
up to Ts = 90 °C |
- |
2.25 |
W |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |